Temperature dependence of hall mobility and μh/ μd for Si.

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cnea.tipodocumentoARTÍCULO
dc.contributor.authorMessier, J.
dc.contributor.authorMerlo Flores, J.
dc.date.accessioned2022-10-20T14:47:55Z
dc.date.issued1963
dc.description.abstractThe temperature dependence of the Hall mobilities has been determined a s 6 -4 x l0 9 T-2'91 and 2-4 x 108 T -2 06 for holes and electrons respectively. Using for the drift mobilities the expression found by Ludwig and Watters , 2-3 x 10° T~2'7 and 2-1 x 109 T~2'5 for holes and electrons, we have calculated the temperature dependence of μh/ μd = r, and found it coherent with the observed variation of the Hall coefficient. At 300°K, for holes μH = 398 cm2 (Vγ)-1 and γp = 0.84 and for electrons μH = 1880cm2 Vδ -1 and μH = 1:31.
dc.description.institutionalaffiliationFil: Messier, J. Comisión Nacional de Energía Atómica; Argentina
dc.description.institutionalaffiliationMerlo Flores, J. Comisión Nacional de Energía Atómica; Argentina
dc.description.institutionalaffiliationComisión Nacional de Energía Atómica; Argentina
dc.format.extent1539-1542 p.
dc.identifier.cnea01.63.04
dc.identifier.urihttps://nuclea.cnea.gob.ar/handle/20.500.12553/2045
dc.language.ISO639-3eng
dc.publisherAmerican Chemical Society
dc.relation.ispartofJ. Phys. chem. solids V. 24 1963
dc.rights.licenseinfo:eu-repo/semantics/openAccess
dc.subject.keywordHALL EFFECT
dc.subject.keywordCARRIER DENSITY
dc.subject.keywordSILICON
dc.subject.keywordELECTRONS MOBILITY
dc.subject.keywordHOLE MOBILITY
dc.titleTemperature dependence of hall mobility and μh/ μd for Si.
dc.typeARTÍCULO CIENTÍFICO
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