Temperature dependence of hall mobility and μh/ μd for Si.

Abstract

The temperature dependence of the Hall mobilities has been determined a s 6 -4 x l0 9 T-2'91 and 2-4 x 108 T -2 06 for holes and electrons respectively. Using for the drift mobilities the expression found by Ludwig and Watters , 2-3 x 10° T~2'7 and 2-1 x 109 T~2'5 for holes and electrons, we have calculated the temperature dependence of μh/ μd = r, and found it coherent with the observed variation of the Hall coefficient. At 300°K, for holes μH = 398 cm2 (Vγ)-1 and γp = 0.84 and for electrons μH = 1880cm2 Vδ -1 and μH = 1:31.