Publicación: Anomalous behavior of Hc3/Hc2 near Tc for Sn-In and In-Bi alloys systems.
Cargando...
Archivos
Fecha
Tipo de recurso
ARTÍCULO CIENTÍFICO
Autores
Responsable institucional (informe)
Compilador
Diseñador
Contacto (informe)
Promotor
Productor
Titular
Inventor
Tutor de tesis
Solicitante
Afiliación
Fil: Maloney, M. D. Comisión Nacional de Energía Atómica; Argentina
de la Cruz, F. Comisión Nacional de Energía Atómica; Argentina
Cardona, M. Comisión Nacional de Energía Atómica; Argentina
Comisión Nacional de Energía Atómica; Argentina
Sede CNEA
Fecha de publicación
Fecha de creación
Idioma
eng
Nivel de accesibilidad
Resumen
Previously reported measurements of the ratio Hci/Hci for ttn-rich Sn-In alloys and indium-rich In-Bi alloys have been extended in further detail, and include variations in foil thickness (6 — 300 /i)- The anomalous behavior in the ratio very near Tc is found to be dependent on foil thickness. Each alloy system is characterized by a certain thickness, above which HcZ/Hc2 decreases markedly as Tc is approached, and below which the opposite behavior takes place. The results can be interpreted qualitatively in terms of a sandwich model in which the strength of the pairing interaction is depressed in a layer at the surface of the sample. For the thickest samples (most nearly “semi-infinite”), there is good quantitative agreement with the recent theory of this proximity effect given by Fink and Presson.