Coexistence of volatile and nonvolatile memristive effects in phase-separated La0.5Ca0.5MnO3-based devices

cnea.tipodocumentoARTÍCULO CIENTÍFICO
dc.contributor.authorRamírez, G. A.
dc.contributor.authorRomán Acevedo, W.
dc.contributor.authorRengifo, M.
dc.contributor.authorNuñez, J. M.
dc.contributor.authorAguirre, M. H.
dc.contributor.authorBriático,J.
dc.contributor.authorRubi,D.
dc.date.accessioned2024-03-11T13:53:01Z
dc.date.available2024-03-11T13:53:01Z
dc.date.issued06-02-2023
dc.description.abstractIn this work, we have investigated the coexistence of volatile and nonvolatile memristive effects in epitaxial phase-separated La0.5Ca0.5MnO3 thin films. At low temperatures (50 K), we observed volatile resistive changes arising from self-heating effects in the vicinity of a metal-to-insulator transition. At higher temperatures (140 and 200 K), we measured a combination of volatile and nonvolatile effects arising from the synergy between self-heating effects and ferromagnetic-metallic phase growth induced by an external electrical field. The results reported here add phase separated manganites to the list of materials that can electrically mimic, on the same device, the behavior of both neurons and synapses, a feature that might be useful for the development of neuromorphic computing hardware.
dc.description.institutionalaffiliationFil.: Ramírez, G. A. Comisión Nacional de Energía Atómica. Instituto de Nanociencia y Nanotecnología; Argentina
dc.description.institutionalaffiliationFil.: Román Acevedo, W. Comisión Nacional de Energía Atómica. Instituto de Nanociencia y Nanotecnología; Argentina
dc.description.institutionalaffiliationFil.: Nuñez, J. M. Comisión Nacional de Energía Atómica. Instituto de Nanociencia y Nanotecnología; Argentina
dc.description.institutionalaffiliationFil.: Rubi,D. Comisión Nacional de Energía Atómica. Instituto de Nanociencia y Nanotecnología; Argentina
dc.identifier.issn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttps://doi.org/10.1063/5.0132047
dc.identifier.urihttps://nuclea.cnea.gob.ar/handle/20.500.12553/5138
dc.language.ISO639-3eng
dc.publisherElsevier
dc.relation.ispartofApplied Physics Letters 122, 063503 (2023)
dc.subject.inisTRANSFORMACIONES DE FASE
dc.subject.inisPEROVSKITA
dc.subject.inisCAPAS FINAS
dc.subject.inisMETALES DE TRANSICION
dc.subject.keywordPhase transitions, Memristor devices, Perovskites, Resistive switching, Thin films, Transition metal oxides
dc.titleCoexistence of volatile and nonvolatile memristive effects in phase-separated La0.5Ca0.5MnO3-based devices
dc.typeARTÍCULO
dc.type.openaireinfo:eu-repo/semantics/article
dc.type.snrdinfo:ar-repo/semantics/artículo
dc.type.versioninfo:eu-repo/semantics/publishedVersion

Archivos

Colecciones