Intrinsic bistability in resonant tunneling structures

Sofo, Jorge O.; Balseiro, C. A.

Intrinsic bistability in resonant tunneling structures

cnea.tipodocumento	INFORME TÉCNICO
dc.contributor.author	Sofo, Jorge O.
dc.contributor.author	Balseiro, C. A.
dc.contributor.cneaproductor	Comisión Nacional de Energía Atómica; Argentina. Instituto Balseiro
dc.date.accessioned	2025-09-03T15:04:33Z
dc.date.available	2025-09-03T15:04:33Z
dc.date.issued	s/f
dc.description.abstract	Our calculation includes the effect of electron-electron interaction in a self-consistent way. We show that charge accumulation in the quantum well is large enough to produce a bistability in the negative differential resistance region of the current-voltage curve.
dc.description.institutionalaffiliation	Fil: Sofo, Jorge O. Comisión Nacional de Energía Atómica; Argentina
dc.description.institutionalaffiliation	Balseiro, C. A. Comisión Nacional de Energía Atómica; Argentina
dc.format.extent	16 p.
dc.format.extent	application/pdf
dc.identifier.uri	https://nuclea.cnea.gob.ar/handle/20.500.12553/7200
dc.language.ISO639-3	eng
dc.publisher	Comisión Nacional de Energía Atómica; Argentina
dc.rights.accesslevel	info:eu-repo/semantics/openAccess
dc.rights.license	Creative Commons Atribución-NoComercial-CompartirIgual 4.0 Internacional
dc.rights.uri	https://creativecommons.org/licenses/by-nc-sa/4.0/
dc.subject.inis	FÍSICA
dc.subject.inis	ELECTRONES
dc.subject.inis	PUNTOS CUÁNTICOS
dc.subject.inis	ELECTRICIDAD
dc.subject.inis	ENERGÍA ELÉCTRICA
dc.subject.inis	PHYSICS
dc.subject.inis	ELECTRONS
dc.subject.inis	QUANTUM DOTS
dc.subject.inis	ELECTRICITY
dc.subject.inis	ELECTRIC POWER
dc.title	Intrinsic bistability in resonant tunneling structures
dc.type	info:eu-repo/semantics/report
dc.type	info:ar-repo/semantics/informe técnico
dc.type.version	info:eu-repo/semantics/publishedVersion

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