Ion implantation inducing two-way shape memory effect in Cu-Al-Ni thin films

Abstract

We report two-way shape memory effect (TWSME) induced by Al ion implantation in 6 μm thick Cu-Al-Ni thin films. The films display an average grain size of 3.7 μm and a martensitic transformation temperature (MS) of ≈ 240 K. The film was irradiated with 2 MeV Al ions with a fluence of 6 × 1015 ion.cm−2 (penetration distance up to ≈ 1.1 μm). After irradiation, the film displays well defined TWSME with a radius of curvature of ≈ 1 mm. The results indicate that the irradiation produces mainly changes in the austenitic order.