Publicación: Anomalous Behavior of Hc3/Hc2 near Tc for Sn-In and In-Bi Alloy Systems
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Fil: de la Cruz, F. Comisión Nacional de Energía Atómica. Instituto Balseiro; Argentina; Brown University; Estados Unidos
Fil: Maloney, M.D. Brown University; Estados Unidos
Fil: Cardona, M. Brown University; Estados Unidos
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Centro Atómico Bariloche
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eng
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Previously reported measurements of the ratio Hc3Hc2 for tin-rich Sn-In alloys and indium-rich In-Bi alloys have been extended in further detail, and include variations in foil thickness (6 - 300 μ). The anomalous behavior in the ratio very near Tc is found to be dependent on foil thickness. Each alloy system is characterized by a certain thickness, above which Hc3Hc2 decreases markedly as Tc is approached, and below which the opposite behavior takes place. The results can be interpreted qualitatively in terms of a sandwich model in which the strength of the pairing interaction is depressed in a layer at the surface of the sample. For the thickest samples (most nearly "semi-infinite"), there is good quantitative agreement with the recent theory of this proximity effect given by Fink and Presson.
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Physical Review B. Vol. 2, no. 7 (1970), p. 2512-2519