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Vacancy tetrahedra in copper due to electron Irradiation in the high-voltage microscope.

cnea.tipodocumentoARTÍCULO CIENTÍFICO
dc.contributor.authorIpohorski, M.
dc.contributor.authorSpring, M. S.
dc.date.accessioned2022-10-20T14:46:40Z
dc.date.issued1970
dc.description.abstractUnder suitable conditions of irradiation in the high-voltage microscope, stacking-fault tetrahedra have been found to form in copper specimens. These defects are thought to be of vacancy type, in contrast to the more usually observed displacement damage, which is of interstitial type.
dc.description.institutionalaffiliationFil: Ipohorski, M. Comisión Nacional de Energía Atómica; Argentina
dc.description.institutionalaffiliationSpring, M. S. Comisión Nacional de Energía Atómica; Argentina
dc.description.institutionalaffiliationComisión Nacional de Energía Atómica; Argentina
dc.format.extent1279-1283 p.
dc.identifier.cnea01.70.18
dc.identifier.urihttps://nuclea.cnea.gob.ar/handle/20.500.12553/1944
dc.language.ISO639-3eng
dc.publisherTaylor & Francis
dc.relation.ispartofPhilosophical Magazine V 22 (180) Dec 1970
dc.rights.licenseinfo:eu-repo/semantics/openAccess
dc.subject.keywordCOOPER
dc.subject.keywordDAMAGE RATIO
dc.subject.keywordINTERSTITIAL
dc.subject.keywordVACANCIES
dc.subject.keywordTETRAHEDRA VACANCY
dc.titleVacancy tetrahedra in copper due to electron Irradiation in the high-voltage microscope.
dc.typeARTÍCULO
dc.type.versionVersión publicada
dspace.entity.typePublication

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