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Short circuit current vs. cell thickness in solar cells under rear illumination: a direct evaluation of the diffusion length

cnea.localizacionCentro Atómico Constituyentes
cnea.tipodocumentoARTÍCULO CIENTÍFICO
dc.contributor.authorPlá, Juan Carlos
dc.contributor.authorTamasi, Mariana Julia Luisa
dc.contributor.authorBolzi, Claudio Gustavo
dc.contributor.authorVenier, G.L.
dc.contributor.authorDurán, Julio César
dc.contributor.cneaproductorComisión Nacional de Energía Atómica. Departamento de Energía Solar
dc.date.accessioned2024-01-17T17:58:13Z
dc.date.available2024-01-17T17:58:13Z
dc.date.issued2000
dc.description.abstractThe dependence of the short circuit current of a solar cell with its thickness is analysed for rear illumination. Under certain conditions, a simple linear regression in a semilogarithm scale is found. Using these results, an almost direct evaluation of the minority carrier diffusion length in the base region of crystalline silicon solar cells is achieved. On the other hand, from the experimental point of view, monochromatic light is not required and the equipment requirements are minimised. The model presented in this paper is theoretically evaluated using a 1-dimensional simulation code. Some preliminary experimental results are also shown.
dc.description.institutionalaffiliationFil.: Plá, Juan Carlos. Comisión Nacional de Energía Atómica. Departamento de Energía Solar; Argentina
dc.description.institutionalaffiliationFil.: Tamasi, Mariana Julia Luisa. Comisión Nacional de Energía Atómica. Departamento de Energía Solar; Argentina
dc.description.institutionalaffiliationFil.: Bolzi, Claudio Gustavo. Comisión Nacional de Energía Atómica. Departamento de Energía Solar; Argentina
dc.description.institutionalaffiliationFil.: Durán, Julio Cesar. Comisión Nacional de Energía Atómica. Departamento de Energía Solar; Argentina
dc.format.extent7 p.
dc.identifier.citationPlá, J. C., Tamasi, M. J. L., Bolzi, C. G., Venier, G. L., & Durán, J. C. (2000). Short circuit current vs cell thickness in solar cells under rear illumination: a direct evaluation of the diffusion length. Solid-State Electronics, 44(4), 719-724.
dc.identifier.doihttps://doi.org/10.1016/S0038-1101(99)00311-1
dc.identifier.issn0038-1101
dc.identifier.urihttps://nuclea.cnea.gob.ar/handle/20.500.12553/4569
dc.language.ISO639-3eng
dc.publisherElsevier Science
dc.rights.accesslevelinfo:eu-repo/semantics/openAccess
dc.rights.urihttps://creativecommons.org/licenses/by-nc-sa/4.0/
dc.sourceSolid State Electronics. 2000; 44(4):719-724
dc.subject.inisCELULAS SOLARES
dc.subject.inisSILICIO
dc.subject.inisDIFUSION
dc.subject.keywordSilicon solar cells
dc.subject.keywordDiffusion length
dc.titleShort circuit current vs. cell thickness in solar cells under rear illumination: a direct evaluation of the diffusion length
dc.typeARTÍCULO
dc.type.openaireinfo:eu-repo/semantics/article
dc.type.snrdinfo:ar-repo/semantics/artículo
dc.type.versioninfo:eu-repo/semantics/publishedVersion
dspace.entity.typePublication

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