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Examinando INSTITUTO DE NANOCIENCIA Y NANOTECNOLOGÍA por Materia "CAPAS FINAS"
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Ítem Solo Metadatos Coexistence of volatile and nonvolatile memristive effects in phase-separated La0.5Ca0.5MnO3-based devices(Elsevier, 06-02-2023) Ramírez, G. A.; Román Acevedo, W.; Rengifo, M.; Nuñez, J. M.; Aguirre, M. H.; Briático,J.; Rubi,D.In this work, we have investigated the coexistence of volatile and nonvolatile memristive effects in epitaxial phase-separated La0.5Ca0.5MnO3 thin films. At low temperatures (50 K), we observed volatile resistive changes arising from self-heating effects in the vicinity of a metal-to-insulator transition. At higher temperatures (140 and 200 K), we measured a combination of volatile and nonvolatile effects arising from the synergy between self-heating effects and ferromagnetic-metallic phase growth induced by an external electrical field. The results reported here add phase separated manganites to the list of materials that can electrically mimic, on the same device, the behavior of both neurons and synapses, a feature that might be useful for the development of neuromorphic computing hardware.Ítem Solo Metadatos Influence of argon pressure on the structural properties of polycrystalline sputtered Fe0.89Ga0.11 thin films(AIP Publishing, 01-01-2021) Ramírez,G.A.; Moya-Riffo,A.; Gómez,J.E.; Malamud,F.; Rodríguez,L.M.; Fregenal,D.; Bernardi,G.; Butera,A.; Milano,J.In this work, we present a systematic study on the relation between the elastic behavior and the structural properties of polycrystalline Fe0.89Ga0.11 thin films deposited on Si(100) substrates. By carrying out pole figure (PF) measurements, we determined the evolution of the texture components, residual stress and Young's modulus (Ys) as a function of the Ar pressure. The samples display several fiber-like texture components (where the fiber axes is always along the growth direction) beside to a random component; the texture component weights depend on the Ar pressure. The study of the residual stress reveals that the samples present a tensile stress, that relaxes when the Ar pressure increases. In the case of Ys, the estimated values vary slightly within the Ar pressure range studied. Finally, the residual stress and Ys behavior is correlated with the microstructure evolution by using the orientation distribution function (ODF) simulated from the PFs.Ítem Solo Metadatos Magnetization reversal modes and coercive field dependence on perpendicular magnetic anisotropy in FePt thin films(Purpose-Led Publishing, 30-06-2023) Román, A.; Lopez Pedroso, A.; Bouzehouane, K.; Gómez, J.E.; Butera, A.; Aguirre, M.H; Medeiros Soares, M.; García, C.; Steren, L.B.The competition between shape and perpendicular magnetic anisotropies in magnetic thin films gives rise to unusual magnetic behaviors. In ferromagnetic thin films, the presence of an out-of-plane component of the magnetic anisotropy may induce a transition from planar to stripe-like magnetic domains above a critical thickness. In this article, we present a detailed study of the magnetization switching mechanism in FePt thin films, where this phenomenon is observed. Using micromagnetic simulations and experiments, we found that below the reversal mechanism is well described by the two-phase model while above this thickness the magnetization within each stripe reverses by coherent rotation. We also analyzed the out-of-plane component of the magnetic anisotropy and its temperature dependence, probing that substrate-induced strains are responsible for the abnormal coercive field behavior observed for FePt films.